ANTI-AMBIPOLAR TRANSISTOR HAVING VERTICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Apr 10, 2024
filing date -
Apr 10, 2024
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Abstract
An anti-ambipolar transistor in which a turn-on operation is performed at a specific gate voltage and a method of manufacturing the same are disclosed. A vertically stacked structure including a first semiconductor layer and a second semiconductor layer, which are disposed perpendicular to the surface of a substrate, is formed, and then a gate dielectric layer and a gate electrode, which completely surround the side of the vertically stacked structure, are formed. Through the vertical structure, an electric field is generated in a direction parallel to the substrate, and a drain-source current is applied in a direction perpendicular to the surface of the substrate. This ensures the integration of the transistor and efficient operation of the transistor.
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