METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING FIN STRUCTURES
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Jun 26, 2024
filing date -
Jun 26, 2024
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Abstract
Methods for manufacturing a semiconductor device structure are provided. The method includes forming a first masking layer covering a first region and a second region and forming a second masking layer over the first masking layer, and the second masking layer includes a first pattern over the second region. The method further includes forming a third masking layer over the second masking layer, and the third masking layer includes a second pattern over the first region and transferring the second pattern of the third masking layer to the second masking layer to form a third pattern from the second masking layer. The method further includes transferring the first pattern and the third pattern of the second masking layer to the first masking layer to form a fourth pattern and a fifth pattern from the first masking layer over the first region and the second region, respectively.
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