SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Nov 2, 2023
filing date -
Nov 2, 2023
priority date (Note) -
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Abstract
A semiconductor device includes a substrate including an active pattern, first and second source/drain patterns overlapping with the active pattern, a separation insulating layer between the first and second source/drain patterns, and first and second gate electrodes spaced apart from each other with the separation insulating layer interposed therebetween. A level of a top surface of the separation insulating layer is higher than a level of a top surface of the first gate electrode and a level of a top surface of the second gate electrode.
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