METHOD OF FABRICATING A FINFET DEVICE
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Jun 25, 2024
filing date -
Jun 25, 2024
priority date (Note) -
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Abstract
In an embodiment, a device includes a first active region over a substrate, a portion of the first active region having a first surface, the first surface defining a channel and being a first distance from the substrate. A dummy structure is adjacent to the first active region and has a sidewall extending from the substrate to a second surface facing way from the substrate, the second surface being a second distance, less than the first distance, from the substrate. An isolation region extends from a sidewall of a lower portion of the first active region over the second surface of the dummy semiconductor structure.
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