SEMICONDUCTOR INTEGRATED CIRCUIT
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Jun 26, 2024
filing date -
Jun 26, 2024
priority date (Note) -
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Abstract
A semiconductor device includes a fin structure. The semiconductor device further includes a gate structure over a region of the fin structure, wherein a bottom-most surface of the gate structure is offset from a top-most surface of the fin structure beyond the region of the fin structure. The semiconductor device further includes a channel layer between the fin structure and the gate structure, wherein the channel layer extends above the top-most surface of the first fin structure beyond the region of the fin structure.
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