METHOD FOR ION IMPLANTATION THAT ADJUSTS A TARGET'S TILT ANGLE BASED ON A DISTRIBUTION OF EJECTED IONS FROM A TARGET
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Jun 25, 2024
filing date -
Jun 25, 2024
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Abstract
The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.
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