PHOTOMASK STRUCTURE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20240345469A1
SERIAL NO

18308670

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A photomask structure including a layout pattern, a first L-type assist pattern, and a second L-type assist pattern is provided. An end portion of the layout pattern includes a first edge, a second edge, and a third edge. The second edge is connected to one end of the first edge, and the third edge is connected to another end of the first edge. The first L-type assist pattern is located between the second L-type assist pattern and the first edge. The layout pattern, the first L-type assist pattern, and the second L-type assist pattern are separated from each other. The first L-type assist pattern surrounds the first edge and the second edge. The second L-type assist pattern surrounds the first edge and the third edge.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Song-Yi Tainan City, TW 31 1440
Liou, En-Chiuan Tainan City, TW 158 807
Sun, Chia-Chen Kaohsiung City, TW 24 49

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