POLISHING PAD WITH ADJUSTED CONTENT OF CHLORINE AND PROCESS FOR PREPARING SEMICONDUCTOR DEVICE USING THE SAME
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United States of America Patent
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Issued Date -
Oct 17, 2024
app pub date -
Mar 19, 2024
filing date -
Mar 19, 2024
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Abstract
The polishing pad according to an embodiment has a chlorine content adjusted to a certain range, whereby it is possible to reduce the size of debris while maintaining excellent physical properties and performance of the polishing pad, thereby minimizing the occurrence of defects and scratches during a chemical mechanical polishing (CMP) process.
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