THIN-SHEET FINFET DEVICE
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United States of America Patent
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Issued Date -
Oct 10, 2024
app pub date -
Jun 17, 2024
filing date -
Jun 13, 2014
priority date (Note) -
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Abstract
A semiconductor device includes a fin protruding upwardly from a substrate. The fin includes a first sidewall and an opposing second sidewall and a top surface extending between the first and second sidewalls. The semiconductor device also includes a two-dimensional material layer disposed on the first and second sidewalls of the fin without being disposed on the top surface of the fin, and a gate stack disposed on the fin. The gate stack contacts a channel region defined in the two-dimensional material layer. The two-dimensional material layer includes a flat portion extending laterally away from the fin.
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