SEMICONDUCTOR DEVICE, FERROELECTRIC CAPACITOR AND LAMINATED STRUCTURE
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United States of America Patent
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Issued Date -
Oct 10, 2024
app pub date -
Jun 18, 2024
filing date -
Jan 27, 2021
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Abstract
A device includes a gate stack and a channel layer over the gate stack. The gate stack includes a metal gate electrode, a ferroelectric layer, and a semiconducting oxide layer disposed between the ferroelectric layer and the metal gate electrode. The semiconducting oxide layer has a thickness between approximately 1 μm and approximately 30 μm.
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