SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Oct 10, 2024
app pub date -
Feb 26, 2024
filing date -
Apr 5, 2023
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Abstract
Provided is a SiC semiconductor device that enables ohmic contact between the main region and the main electrode and can suppress large surface irregularities in other regions. The SiC semiconductor device includes, an active part and a voltage withstanding structure part and includes a drift layer formed of SiC; a base region formed of SiC and provided on the top face side of the drift layer in the active part; main regions 6a, 6b formed of Sic, provided on the top face side of the base region, and containing a 3C structure in at least the top face portion thereof; a channel stopper region 6c formed of SiC with a 4H structure and provided on the top face side of the drift layer in the voltage withstanding structure part; an insulated gate electrode structure; and an inorganic insulating film 10 provided on the top face of the channel stopper region.
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