CONTAMINANT COLLECTION ON SOI

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United States of America Patent

APP PUB NO 20240339457A1
SERIAL NO

18748862

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An integrated circuit includes an SOI substrate having a semiconductor layer over a buried insulator layer. An electronic device has an NWELL region in the semiconductor layer, a dielectric over the NWELL region, and a polysilicon plate over the dielectric. A white space region adjacent the electronic device includes a first P-type region in the semiconductor layer and adjacent the surface. The P-type region has a first sheet resistance and the NWELL region has a second sheet resistance that is greater than the first sheet resistance.

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Patent Owner(s)

Patent OwnerAddress
TEXAS INSTRUMENTS INCTEXAS USA TEXAS

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Honglin Dallas, US 29 64
Sweeney, Frank John Rockwall, US 2 0

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