CANTILEVER NANOELECTROMECHANICAL DECODER CIRCUIT AND METHODS FOR FORMING THE SAME

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United States of America Patent

APP PUB NO 20240339142A1
SERIAL NO

18295276

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Abstract

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A device structure includes a two-dimensional array of memory cells embedded in a memory-level dielectric layer and overlying a substrate; first access lines electrically connected to a respective row of memory cells within the two-dimensional array; and a first decoder circuit including first cantilever nanoelectromechanical devices that overlie the two-dimensional array of memory cells, are embedded in upper dielectric material layers, and have output nodes that are electrically connected to a respective first access line selected from the first access lines.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDNO 8 LI-HSIN 6 ROAD HSINCHU SCIENCE PARK HSINCHU ROC 30077

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiang, Katherine H New Taipei City, TW 143 70
Kao, Yun-Feng New Taipei City, TW 37 5
Kuo, Jyun-Yan Hsinchu City, TW 3 0
Lee, Wei Hsinchu City, TW 40 140

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