MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Oct 10, 2024
app pub date -
Jun 30, 2022
filing date -
Sep 8, 2021
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Abstract
Provided are a mask blank, a phase shift mask, and a method of manufacturing a semiconductor device. A mask blank comprises a light-shielding film on a transparent substrate. The light-shielding film is made of a material comprising silicon and nitrogen. An internal region of the light-shielding film has a maximum peak at a binding energy in a range in which a Si2p narrow spectrum obtained by analysis by X-ray photoelectron spectroscopy is more than 100 eV and 101.5 eV or less. The internal region of the light-shielding film is a region obtained by excluding a back surface side region on the transparent substrate side and a front surface side region opposite to the transparent substrate.
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