Importance

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Abstract

A high-electron mobility transistor includes a semiconductor body includes a plurality of type III-nitride semiconductor layers stacked on top of one another, thereby forming a plurality of two-dimensional first charge type gas channels; source and drain electrodes that are laterally spaced apart from one another and in ohmic contact with each of the two-dimensional first charge type gas channels; a gate structure including a plurality of gate columns that extend into the semiconductor body and define gate fin portions of the semiconductor body, wherein the gate structure is configured to control a conductive connection between the source and drain electrodes by controlling a conductive state of each of the two-dimensional first charge type gas channels within the gate fin portions, and wherein the gate fin portions are doped with second conductivity type dopant atoms, thereby locally reducing a concentration of free first charge type carriers within the gate fin portions.

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First Claim