SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
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United States of America Patent
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Issued Date -
Oct 3, 2024
app pub date -
Mar 25, 2024
filing date -
Mar 28, 2023
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Abstract
A semiconductor structure includes: a channel protrusion structure, suspended on a base, including channel layers arranged at intervals along a longitudinal direction; a gate structure, spanning the channel protrusion structure and covering part of a top and part of a side wall of the channel protrusion structure, surrounding and covering the channel layers, the gate structure located between adjacent channel layers in the longitudinal direction and between adjacent channel layers and the base serving as an inner gate structure, and the inner gate structure and the adjacent channel layers, and/or, the inner gate structure, the adjacent channel layers and the base forming an inner trench; an inner spacer, located in the inner trench; and a source/drain doped layer, located on the base and connected to two ends of the channel layer, the source/drain doped layer and the inner spacer having a gap therebetween used as an air spacer.
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