SEMICONDUCTOR DECIVE AND PRODUCTION METHOD THEREFOR
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 3, 2024
app pub date -
Mar 12, 2024
filing date -
Mar 29, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present invention realizes a semiconductor device capable of forming a good contact with a 2DEG layer. The semiconductor device includes a recess formed in a partial region of a surface of the barrier layer and having a depth reaching the channel layer, and an electrode formed to cover along the recess. The recess has a first side surface being an exposed surface of the barrier layer and having an angle with respect to a main surface of the substrate, a terrace continuing to the first side surface and being an exposed surface of the channel layer, and a second side surface continuing to the terrace, being an exposed surface of the channel layer, and having an inclination angle smaller than the angle of the first side surface with respect to the main surface of the substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully