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Abstract

A critical dimension prediction system includes a measuring device configured to acquire sample data from a sample semiconductor chip, the sample data including a plurality of spectrums, a training data selection device configured to select a training data set based on the sample data, a critical dimension predicting model generating device configured to generate a critical dimension predicting model by training an artificial intelligence model based on the training data set, and a critical dimension predicting device configured to predict a critical dimension of a target layer by inputting input data into the critical dimension predicting model, the input data including information about the target layer, where the training data selection device is further configured to assign a sparsity score to each of the plurality of spectrums and select at least one of the plurality of spectrums as the training data set based on the sparsity score.

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