PLASMA ENHANCED EPITAXIAL CHEMICAL VAPOR DEPOSITION SYSTEM
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 3, 2024
app pub date -
Mar 28, 2024
filing date -
Mar 31, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Methods and apparatuses for a material layer deposition method in a semiconductor manufacturing system. A controller may seat a substrate on a substrate support. A silicon-containing material layer precursor may be provided to a remote plasma unit, which may decompose at least a portion of the silicon-containing material layer precursor. An epitaxial material layer comprising silicon may be deposited onto the substrate using a decomposition product. The deposition rate and/or growth rate may be increased at a given deposition temperature.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully