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Abstract

Provided is an optical proximity correction method in consideration of off-axis chromatic aberration produced when a photosensitive substrate is exposed to pulse laser light having center wavelengths. A method for creating a photomask includes scanning a test wafer in a first direction with the pulse laser light via a test mask to pattern the test wafer, measuring a wafer pattern of the patterned test wafer to acquire a measured wafer pattern indicating the result of the measurement in each of divided regions arranged on a surface of the test wafer in a second direction that intersects with the first direction, creating a corrected mask pattern for creating the photomask based on a test mask pattern formed at the test mask, the measured wafer pattern, and a target pattern that is a target wafer pattern at a photosensitive substrate, and creating the photomask based on the corrected mask pattern.

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First Claim