WAFER MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
Oct 3, 2024
app pub date -
Jun 6, 2024
filing date -
Dec 8, 2021
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Abstract
A surface of one end side of an ingot in a height direction thereof is irradiated with a laser beam having a permeability to the ingot, thereby forming a peeling layer at a depth position corresponding to a thickness of the wafer from the surface. A laser scanning irradiating the laser beam is performed for a plurality of times changing the irradiation position in a second direction while causing an irradiation position of the laser beam to move in a first direction. With a single laser scanning, a plurality of laser beams are irradiated in which irradiation positions are different in the first direction and the second direction.
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