THREE-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Sep 26, 2024
app pub date -
Feb 1, 2024
filing date -
Mar 24, 2023
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Abstract
A 3D FeRAM is provided. The 3D FeRAM includes a semiconductor patterns stacked in a vertical direction on a substrate and spaced apart from each other in a first horizontal direction, bit lines on first side surface of the semiconductor patterns, extending in the first horizontal direction, and spaced apart from each other in the vertical direction, first electrodes on second side surfaces of the semiconductor patterns and spaced apart from each other in both the vertical direction and the first horizontal direction, a ferroelectric layer on the first electrodes, second electrodes on the ferroelectric layers, extending in the first horizontal direction, and spaced apart from each other in the vertical direction, and word lines between two adjacent semiconductor patterns extending in the vertical direction.
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