SEMICONDUCTOR DEVICE MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
Sep 26, 2024
app pub date -
Mar 21, 2024
filing date -
Mar 23, 2023
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Abstract
A semiconductor device manufacturing method of embodiments includes: forming an insulating film on an outer peripheral portion of a surface of a first substrate; after forming the insulating film, forming a silicon layer in contact with the surface inside the insulating film; and forming a porous silicon layer by making the silicon layer inside the insulating film porous using an anodization method.
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