Constant VDS1 Bias Control for Stacked Transistor Configuration

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United States of America Patent

APP PUB NO 20240322760A1
SERIAL NO

18406724

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

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Patent Owner(s)

Patent OwnerAddress
PSEMI CORPORATION9369 CARROLL PARK DRIVE SAN DIEGO CA 92121

International Classification(s)

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  • 2024 Application Filing Year
  • H03F Class
  • 601 Applications Filed
  • 24 Patents Issued To-Date
  • 4 % Issued To-Date

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dykstra, Jeffrey A Woodstock, US 37 1318
Murphy, Christopher C Lake Zurich, US 36 333
Ranta, Tero Tapio San Diego, US 114 1692

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges11886301 - 1001002003004005006007008009001000110012001300

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