SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Sep 26, 2024
app pub date -
Aug 23, 2023
filing date -
Mar 22, 2023
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Abstract
A conductor layer is positioned between a gate electrode and a drain electrode. The conductor layer contacts a nitride semiconductor layer. The conductor layer is electrically connected with the drain electrode. The drain electrode includes a first part contacting the nitride semiconductor layer, and a second part positioned further toward the conductor layer side than the first part in a first direction. An insulating film includes a portion positioned between the conductor layer and the drain electrode. The second part is located on the portion of the insulating film.
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