Importance

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Abstract

An integrated circuit device includes a fin-type active region that protrudes from a substrate and extends in a first horizontal direction, a plurality of nanosheets disposed on the fin-type active region and separated from each other in the vertical direction, a gate line that extends in a second horizontal direction and that surrounds the plurality of nanosheets on the fin-type active region, and includes respective sub-gate portions between the plurality of nanosheets and a main gate portion above the uppermost layer of the plurality of nanosheets, a source/drain region disposed on the fin-type active region, adjacent to the gate line, and connected to the plurality of nanosheets, and a plurality of inner spacers interposed between the gate line and the source/drain region. The shapes of first inner spacers that face the sub-gate portions differ from the shape of a second inner spacer that faces the main gate portion.

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First Claim