METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
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United States of America Patent
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Issued Date -
Sep 26, 2024
app pub date -
Mar 19, 2024
filing date -
Mar 24, 2023
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Abstract
There is provided a technique that includes: forming an oxide film containing a predetermined element over the substrate by performing a first cycle a first predetermined number of times, the cycle including: (a) forming a first layer containing the predetermined element terminated with a halogen element over the substrate by supplying a first precursor containing the predetermined element and the halogen element to the substrate; (b) forming a second layer containing the predetermined element over the substrate by supplying a second precursor containing the predetermined element and a single amino group bonded to the predetermined element in one molecule to the substrate over which the first layer is formed; and (c) oxidizing the second layer by supplying an oxidizing agent to the substrate over which the second layer is formed.
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