Importance

Loading Importance Indicators...

Abstract

A wafer production method for producing a wafer from an ingot oriented to have a c-axis inclined in an off-angle direction at an off-angle more than zero degree From a central axis includes steps of emitting a laser beam to a top surface that is one of end surfaces of the ingot opposed to each other in height direction thereof to form a separation layer at a depth from the top surface of the ingot which corresponds to a thickness of the wafer, applying a physical load in a single direction to a first end that is one of ends of the ingot which are opposed to each other in an off-angle direction to remove a wafer precursor from the ingot at the separation layer, and planarizing a major surface of a removed object derived by separating the wafer precursor from the ingot at the separation layer, thereby forming a wafer. The ingot has a given degree of transmittance to the laser beam. The wafer precursor is created by a portion of the ingot between the top surface of the ingot and the separation layer.

Loading the Abstract Image...

First Claim