MAGNETIC MEMORY DEVICE
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United States of America Patent
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Issued Date -
Sep 19, 2024
app pub date -
Mar 8, 2024
filing date -
Mar 14, 2023
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Abstract
According to one embodiment, a magnetic memory device includes a memory cell. The memory cell includes a switching element, a magnetoresistance effect element, and an electrode that electrically couples the switching element to the magnetoresistance effect element. The electrode includes: a first non-magnetic layer being in contact with the switching element; and a second non-magnetic layer provided on a side opposite to a side on which the switching element is provided with respect to the first non-magnetic layer. The second non-magnetic layer has an amorphous structure and contains a metal oxide or a metal nitride.
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