RESISTOR BETWEEN DUMMY FLASH STRUCTURES

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United States of America Patent

APP PUB NO 20240315017A1
SERIAL NO

18135712

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Abstract

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A resistor between dummy flash structures includes a substrate. The substrate includes a resistor region and a flash region. A first dummy memory gate structure and a second dummy memory gate structure are disposed within the resistor region of the substrate. A polysilicon resistor is disposed between the first dummy memory gate structure and the second dummy memory gate structure. The polysilicon resistor contacts the first dummy memory gate structure and the second dummy memory gate structure.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HSU, CHIA CHING Singapore, SG 2 0
LIU, WEICHANG Singapore, SG 25 69
Tseng, Yung-Lin Changhua County, TW 3 0
Wang, Shen-De Hsinchu County, TW 57 189
Xiang, Wang Singapore, SG 26 96

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