SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20240315007A1
SERIAL NO

18592970

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor device includes a first oxide semiconductor layer extending in a first direction, a first wiring extending in a second direction that intersects the first direction and surrounding the first oxide semiconductor layer, a first insulating film provided between the first wiring and the first oxide semiconductor layer, a first conductor provided on the first oxide semiconductor layer, a second wiring provided on the first conductor and extending in a third direction that intersects each of the first direction and the second direction, a first insulating layer in contact with a side surface of the second wiring, and a second insulating layer provided on the first insulating layer and having oxygen permeability lower than oxygen permeability of the first insulating layer.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKITA, Takanori Yokkaichi Mie, JP 5 0
FUJII, Takahiro Nagoya Aichi, JP 134 1363
NODA, Kotaro Yokkaichi Mie, JP 63 104
OKAJIMA, Mutsumi Yokkaichi Mie, JP 57 191

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