APPARATUS AND METHOD FOR ULTRA-FAST CRYSTALLIZATION IN PHASE - CHANGE RF SWITCHES
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United States of America Patent
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Issued Date -
Sep 19, 2024
app pub date -
Feb 15, 2022
filing date -
Feb 15, 2021
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Abstract
An indirectly heated phase change switch (IPCS) for radio frequency (RF) switching, comprises two RF ports and an RF path therebetween, a phase change material (PCM) located between the RF ports, an embedded heater separated from the PCM by a dielectric layer, the embedded heater configured to provide thermal actuation of the PCM to bring about phase changes between a crystalline state and an amorphous state to provide Ohmic switching, and a bias voltage on the IPCS across said RF path. The bias is provided during heating to improve the crystallization time.
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