PHASE SHIFT MASK FOR EUV LITHOGRAPHY AND MANUFACTURING METHOD FOR THE PHASE SHIFT MASK

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United States of America Patent

APP PUB NO 20240310717A1
SERIAL NO

18669041

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

International Classification(s)

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  • 2024 Application Filing Year
  • G03F Class
  • 1070 Applications Filed
  • 26 Patents Issued To-Date
  • 2.43 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HA, Tae Joong Icheon-si Gyeonggi-do, KR 19 23

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges203382101 - 1021 - 3001002003004005006007008009001000110012001300140015001600170018001900200021002200

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