PHASE SHIFT MASK FOR EUV LITHOGRAPHY AND MANUFACTURING METHOD FOR THE PHASE SHIFT MASK
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United States of America Patent
Stats
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N/A
Issued Date -
Sep 19, 2024
app pub date -
May 20, 2024
filing date -
Jun 15, 2021
priority date (Note) -
Published
status (Latency Note)
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Abstract
There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SK HYNIX INC | GYEONGGI DO SOUTH KOREA GYEONGGI-DO |
International Classification(s)

- 2024 Application Filing Year
- G03F Class
- 1070 Applications Filed
- 26 Patents Issued To-Date
- 2.43 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
HA, Tae Joong | Icheon-si Gyeonggi-do, KR | 19 | 23 |
# of filed Patents : 19 Total Citations : 23 |
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- 0 Citation Count
- G03F Class
- 0 % this patent is cited more than
- 1 Age
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