SILICON PRECURSOR MATERIALS, SILICON-CONTAINING FILMS, AND RELATED METHODS
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United States of America Patent
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Issued Date -
Sep 19, 2024
app pub date -
May 24, 2024
filing date -
Aug 30, 2021
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Abstract
Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatized to obtain a silicon precursor vapor. The at least one co-reactant precursor material is volatized to obtain at least one co-reactant precursor vapor. The silicon precursor vapor and the at least one co-reactant precursor vapor are contacted with the substrate, under chemical vapor deposition conditions, sufficient to form a silicon-containing film on a surface of the substrate. Some embodiments relate to silicon precursor materials for chemical vapor deposition.
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