SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Sep 12, 2024
app pub date -
Dec 13, 2023
filing date -
Mar 6, 2023
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Abstract
A semiconductor memory device includes a substrate having an element separation film defining active areas; and gate structures in trenches on the substrate and intersecting the active areas, wherein each of the gate structures includes a gate insulating layer extending along sidewalls and a bottom surface of a corresponding one of the trenches, a gate electrode layer on the gate insulating layer and including a first metal layer and a second metal layer on the first metal layer, a liner film between the gate insulating layer and the first metal layer and including a same metal material as the first and second metal layers, and a capping film in contact with the second metal layer.
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