SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Sep 12, 2024
app pub date -
May 16, 2024
filing date -
Jan 30, 2019
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Abstract
A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.
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