SILICON CARBIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Sep 12, 2024
app pub date -
Jan 30, 2024
filing date -
Mar 9, 2023
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Abstract
A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type; a semiconductor region of a second conductivity-type provided on a top surface side of the drift layer in an intermediate part between an active part and an edge termination part; a first insulating film provided on a top surface of the semiconductor region; a wiring layer provided on a top surface of the first insulating film; a second insulating film provided on a top surface of the wiring layer; and a gate pad provided on a top surface of the second insulating film so as to be electrically connected to the wiring layer, wherein the semiconductor region includes a first region having a 4H structure overlapping with at least a part of the wiring layer in a depth direction, and a second region having a 3C structure provided on a top surface side of the first region.
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