Importance

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Abstract

A high-electron mobility transistor includes a semiconductor body including a plurality of type III-nitride semiconductor layers stacked on top of one another, thereby forming a plurality of two-dimensional first charge type gas channels and at least one two-dimensional second charge type gas channel vertically in between two of the two-dimensional first charge type gas channel, source and drain electrodes that are laterally spaced apart from one another and in ohmic contact with the plurality of two-dimensional first charge type gas channel, a gate structure configured to control a conductive connection between the source and drain electrodes by controlling a conductive state of the plurality of two-dimensional first charge type gas channels, and a charge dissipation structure that is configured to remove second charge type carriers from the two-dimensional second charge type gas channel during an off-state of the high-electron mobility transistor.

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First Claim