METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR SEPARATING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS
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United States of America Patent
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Sep 12, 2024
app pub date -
Mar 6, 2024
filing date -
Mar 7, 2023
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Abstract
A method of manufacturing a semiconductor device includes forming a bonded substrate including an effective chip area by bonding a first chip including a first device layer on a first substrate via a porous layer and a second chip including a second device layer on a second substrate, irradiating the porous layer in an ineffective chip area surrounding the effective chip area of the bonded substrate with laser light from the first substrate side, and separating the first substrate from the bonded substrate from the porous layer in the ineffective chip area.
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