SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
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United States of America Patent
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Sep 12, 2024
app pub date -
Feb 14, 2022
filing date -
Feb 22, 2021
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Abstract
Provided are a substrate processing method and a substrate processing apparatus that improve an etching resistance and suppress a film stress. A substrate processing method of forming a carbon-based film on a substrate includes: a process of placing the substrate on a stage; a first film forming process of forming a first carbon-based film having a first stress; a second film forming process of forming a second carbon-based film having a second stress; and a third film forming process of repeating the first film forming process and the second film forming process to form a stacked body of the first carbon-based film and the second carbon-based film, wherein the first stress and the second stress are oriented in a same direction, and the first stress and the second stress have different intensities.
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