PHASE SHIFT MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK

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United States of America Patent

APP PUB NO 20240302732A1
SERIAL NO

18281542

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided are a phase shift mask blank that suppresses the formation of haze on a phase shift film surface and reduces film peeling during cleaning or a level difference in a cross-section of a modified portion during modification etching to improve transfer performance, a phase shift mask, and a method for manufacturing a phase shift mask. A phase shift mask blank (10) according to an embodiment of the present invention is a phase shift mask blank used for producing a phase shift mask to which exposure light having a wavelength of 200 nm or less is applied, the phase shift mask blank (10) including a transparent substrate (11) and a phase shift film (12), in which the phase shift film (12) includes a phase difference and transmittance adjustment layer (13), a protective layer against gas permeation (15), and a compositionally graded layer (14), and in the compositionally graded layer (14), a content of a component configuring the phase difference and transmittance adjustment layer (13) decreases from the substrate side (11) toward the protective layer against gas permeation (15) side, and a content of a component configuring the protective layer against gas permeation (15) increases from the substrate (11) side toward the protective layer against gas permeation (15) side.

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Patent Owner(s)

Patent OwnerAddress
TEKSCEND PHOTOMASK CORP1-5-2 HIGASHI-SHIMBASHI MINATO-KU TOKYO 1057133 ?1057133

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KOJIMA, Yosuke Tokyo, JP 18 217
KUROKI, Kyoko Tokyo, JP 10 13
MATSUI, Kazuaki Tokyo, JP 29 372

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