CHEMICAL-RESISTANT PROTECTIVE FILM FORMING COMPOSITION CONTAINING HYDROXYARYL-TERMINATED POLYMER
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Sep 12, 2024
app pub date -
Mar 26, 2024
filing date -
Apr 11, 2019
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Abstract
A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents—OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).
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