SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
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United States of America Patent
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Issued Date -
Sep 5, 2024
app pub date -
Dec 1, 2023
filing date -
Mar 2, 2023
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Abstract
In a silicon carbide semiconductor device, in a plan view, a plurality of source contact holes is intermittently provided in a second direction along a trench gate, and a source electrode is provided on an insulating film and is electrically connected to a source layer via the plurality of source contact holes. Intermittent recesses reflecting the shapes of the plurality of source contact holes are provided on a surface of the source electrode on a side opposite to the semiconductor substrate.
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