DIELECTRIC LAYER, INTERCONNECTION STRUCTURE USING THE SAME, AND MANUFACTURING METHOD THEREOF

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United States of America Patent

APP PUB NO 20240297038A1
SERIAL NO

18663038

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Abstract

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The present disclosure provides a method. In some embodiments, the method includes forming a first porogen over a dielectric film; depositing a first dielectric monolayer over the first porogen and in contact with the dielectric film; removing the first porogen. In some embodiments, the method includes forming a first porogen over a substrate; forming a first dielectric film over the first porogen; after forming the first dielectric film, performing an UV treatment on the first porogen.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-77 R O C

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Che-Lun Kaohsiung City, TW 29 66
CHOU, You-Hua Hsinchu City, TW 118 1212
HO, Yi-Chen Taichung City, TW 19 15
LIAO, Yen-Hao New Taipei City, TW 3 2
WU, Zhen-Cheng Hsinchu County, TW 69 689

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