MEMORY DEVICE WITH DUAL INTERFACE, TEST METHOD AND TEST SYSTEM THEREOF

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United States of America Patent

APP PUB NO 20240296900A1
SERIAL NO

18511992

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Abstract

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Disclosed is a memory device with dual interface, test method and test system thereof. An initialization procedure is executed by the memory device with dual interface in a PCIe mode. A voltage level of a pin of the memory device with dual interface is altered according to the initialization procedure, wherein the pin of the memory device with dual interface operates in a SD mode but not in PCIe mode. The voltage level of the pin of the memory device with dual interface is switched between a high voltage level and a low voltage level at a first frequency during a test stage of the initialization procedure. The voltage level of the pin of the memory device with dual interface is kept at the high voltage level or the low voltage level during a result display stage of the initialization procedure.

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Patent Owner(s)

Patent OwnerAddress
SILICON MOTION INC8F-1 NO 36 TAIYUAN ST ZHUBEI CITY HSINCHU COUNTY 30265

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
OU, Hsu-Ping Zhubei City, TW 30 183
TUNG, Chun-Ho Zhubei City, TW 1 0

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