Importance

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Abstract

An SiC single-crystal growth apparatus is provided that is capable of uniformly heating solid source material to sublimate it into gaseous material and capable of reducing wasted material during the growth of an SiC single crystal. An SiC single-crystal growth apparatus (1) includes: a heating vessel (10) including a material containing portion (12) that contains solid source material (M(s)) of SiC in a portion of the interior space (S) defined by a cylindrical peripheral side portion (14), and a seed-crystal mounting portion (16) located in a portion of the interior space (S) of the material containing portion (12) that does not contain the solid source material (M(s)), the seed-crystal mounting portion adapted to allow a seed crystal (2) of SiC to be placed thereon; and a heating member (3) that heats the heating vessel (10), the heating member (3) including a first heating sub-member (31) having a first heating surface (31a) positioned outside of the heating vessel (10) to face a major surface portion of the material containing portion (12) in such a positional relationship as to cover the entire outer surface of the major surface portion, the major surface portion located opposite to the seed-crystal mounting portion (16), the apparatus satisfying the relationship B/A≥2, where A is the sectional area of the interior space S, and B is the area of the first heating surface (31a).

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First Claim