VERTICAL POWER SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 29, 2024
app pub date -
Feb 23, 2024
filing date -
Feb 28, 2023
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Abstract
A vertical power semiconductor device includes a semiconductor body having first and second opposite surfaces. A subdivision of an area of the semiconductor body at the first surface includes: a transistor cell area having transistor cells in the semiconductor body; an edge termination area surrounding the transistor cell area, the semiconductor body including a termination structure in the edge termination area; a gate line area between the transistor cell area and the edge termination area, the gate line area including a gate line over the semiconductor body; and a source or emitter line area between the gate line area and the edge termination area. The source or emitter line area includes transistor cells in the semiconductor body, and a source or emitter line over the semiconductor body.
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