NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME

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United States of America Patent

APP PUB NO 20240290401A1
SERIAL NO

18385185

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Abstract

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A method of controlling a nonvolatile memory device, includes: determining, based on a write address, whether selected memory cells of the nonvolatile memory device corresponding to the write address are included in an over-erased group; based on the selected memory cells being included in the over-erased group, performing a preprogram operation to increase threshold voltages of an over-erased state of the selected memory cells; and after completion of the preprogram operation, performing a data program operation to store write data in the selected memory cells.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Yonghyuk Suwon-si, KR 29 55
LEE, Yohan Suwon-si, KR 73 493
PARK, Sangsoo Suwon-si, KR 39 354
YU, Jaeduk Suwon-si, KR 30 36

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