METHODS FOR FORMING IMPURITY FREE METAL ALLOY FILMS
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United States of America Patent
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Issued Date -
Aug 29, 2024
app pub date -
Apr 22, 2024
filing date -
Aug 12, 2020
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Abstract
Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):
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