METHOD OF FABRICATING SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20240280895A1
SERIAL NO

18381773

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Abstract

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A method of fabricating a semiconductor device may include forming a target pattern on a first wafer by performing a first exposure process, measuring a misalignment value of the target pattern, calculating a block misalignment value and a pattern misalignment value based on the misalignment value, calculating a block correction value based on the block misalignment value and calculating a pattern correction value based on the pattern misalignment value, and performing a second exposure process on a second wafer, based on the block correction value and the pattern correction value.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LEE, Byung-Hyun Suwon-si, KR 29 152
LEE, Dongkyun Suwon-si, KR 5 1
LEE, Hoin Suwon-si, KR 10 22
YANG, Sangchul Suwon-si, KR 2 0
YEEM, Jinnam Suwon-si, KR 1 0

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